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1.
Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN. 相似文献
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1 Introduction a Zinc Oxide (ZnO), a II-VI compound semiconductor with a wide direct band gap of about 3.4 eV [1], has been extensively studied in recent time for their possible applications in short-wavelength light-emitting devices [2], surface wave dev… 相似文献
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采用直流反应磁控溅射法,制备了铝掺杂的氧化锌薄膜.结果显示：薄膜在500℃退火后透光率高,光敏特性良好,并且有明显的紫外光响应.其XRD衍射谱表明随着O2与Ar流量比的增加,对应于（002）晶面的衍射峰趋于尖锐,c轴取向突出明显. 相似文献
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MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290℃. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure. 相似文献
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利用反应磁控溅射法在S i基地生长Zn1-xFexO(x=0.04,0.06,0.08,0.10,0.12)薄膜.X射线衍射结果表明所有样品都具有纤锌矿结构,且C轴择优取向.X射线光电子能谱显示薄膜中的Fe离子为 2价态.磁力显微镜结果表明薄膜具有明显的磁畴花样.磁性测量表明所有在真空下退火的样品都具有室温铁磁性而空气下退火样品具有顺磁性.薄膜中的铁磁性与氧空位有关. 相似文献
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采用射频磁控溅射法制备了锐钛矿相TiO2薄膜,在基片温度、溅射功率、溅射时间以及靶材与基片间的距离等因素不变的情况下,研究不同氩氧分压比对薄膜亲水性能的影响。通过原子力显微镜(AFM)、X射线衍射光谱(XRD)表征了薄膜的微观表面形貌和晶相组成,采用静态接触角(SCA)评估薄膜的亲水性。实验结果表明不同氩氧比制备的锐钛矿相TiO2薄膜,紫外光照12 h后,接触角降到10o左右,而氩氧比小于等于5:5的接触角都低至5o左右,达到了超亲水性。氩氧分压比为4:6时,样品薄膜的光致亲水性最佳且光照后亲水性的保持较长。 相似文献
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采用溶胶凝胶(sol-gel)法,在普通载玻片上成功制备ZnO薄膜,对于不同退火温度样品采用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外可见分光光度计(UVS)及光致荧光光谱(PL)对样品的结构、形貌和光学特性进行表征.XRD谱表明在300℃、400℃、500℃退火处理的样品都有较好的c轴择优取向,而且随着退火温度的升高择优取向明显改善.透射谱中能观察到明显的ZnO吸收边.用AFM观察到的样品表面形貌表明,退火温度提高使样品表面更加平整,同时粒径变大.PL谱中在380nm附近可观察到明显发光峰. 相似文献
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Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively. 相似文献
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INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th… 相似文献
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高立华 《洛阳师范学院学报》2012,31(5):34-36,45
在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳. 相似文献
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SiCN薄膜通过反应溅射法制备,并通过红外吸收谱（IR）进行表征。结果表明,薄膜中的N含量受衬底温度、N2流量、溅射功率影响。低的衬底温度会有利于N的进入,衬底温度过高,N含量将显著下降。在恰当的N2流量下才能在薄膜中获得最高的N含量。提高溅射功率可以使得薄膜中N含量升高。 相似文献
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MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging
from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the
XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 °C. Both AFM and
TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1−x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional
micrograph showing a well defined columnar structure.
Project supported by the National Science Council of PRC (No. 59910161981) and RGC grant from the Hong Kong Government under
Grant (No. NS-FC/HKUST 35) 相似文献
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利用磁控溅射法在玻璃基片上制备Zn095Ca005O薄膜,用X射线衍射（XRD）研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350－400nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。 相似文献
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In 1972 ,KimandTakahashi[1] observedagiantsaturatedmagneticfluxdensity (Bs=2 .5 8T)whichwas 17%strongerthanthatofpureiron .BelievingthattheFe NfilmwasapolycrystallinemixtureofFeandα″ Fe16 N2 ,theydeducedthattheBsofα″ Fe16 N2 wouldbe2 .83Tfromthevolumeratioofα″ Fe16 N2 inthefilm .Sincethelargesaturatedfluxdensityisofimportance ,boththeoreticallyandfromthepointofviewofpracticalapplications,manyresearchershavemadegreateffortsandusedavarietyofmethodstosynthesizeα″ Fe16 N2 intobulkmat… 相似文献
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采用非醇盐溶胶-凝胶工艺在Al_2O_3基片上旋转涂敷制得掺Sb的SnO_2薄膜。再经直流溅射制得掺Pt的Sb:SnO_2薄膜,探讨了不同Pt添加量对气敏性能的影响。结果表明,对Pt的溅射时间为90s时,元件对50ppm浓度乙醇气体的灵敏度高达43。经选择性研究表明,该元件有较好的选择性和优异的酒敏特性。 相似文献
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用电化学阳极氧化法制备了一定孔隙率的多孔硅样品,然后用脉冲激光沉积法以PS为衬底生长一层ZnS薄膜.用X射线衍射仪、扫描电子显微镜和荧光分光光度计分别表征了ZnS薄膜的结构、形貌和ZnS/PS复合膜的光致发光性质.XRD结果表明,制备的ZnS薄膜沿β-ZnS(111)方向择优生长,结晶质量良好,但衍射峰的半峰全宽较大;SEM图像显示,ZnS薄膜表面出现一些凹坑,这是衬底PS的表面粗糙所致.室温下的光致发光谱表明,沉积ZnS薄膜后,PS的发光峰蓝移.把ZnS的蓝绿光与PS的橙红光叠加,在可见光区450~700 nm形成了一个较宽的光致发光谱带,ZnS/PS复合膜呈现较强的白光发射. 相似文献
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Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60 and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) ... 相似文献
18.
采用直流反应溅射方法在N型Si(100)衬底上制备了ZnO薄膜.薄膜的晶体结构采用X射线衍射技术来表征,测量结果表明制备的样品是沿c轴高度取向的六方纤锌矿结构的多晶薄膜.扫描电子显微镜测量显示薄膜的表面粗糙度较低,且ZnO与Si衬底的边界线清晰,结构致密.此外,利用室温光致发光谱研究了薄膜的光学性能,ZnO薄膜的室温光致发光谱(PL)只有位于377nm处的一个很强的紫外峰,这与材料内的激子复合有关.此外对薄膜进行了拉曼散射的研究,拉曼频移的计算结果表明溅射生长的薄膜中存在张应力(0.25Gpa). 相似文献
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