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Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. 相似文献
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作为一种性能稳定的绝缘体,HfO2在电子、光学以及能量相关的领域中有着重要的应用。在本工作中,我们使用反应溅射方法在不同O2／Ar比例下制备了HfO2薄膜。XRD结果显示,O2／At比例并不能明显的影响样品的结构。通过Debye—Schener公式估计,样品由纳米晶粒组成。在O2／Ar比例为0．06（功率12W）时制备的样品最接近化学配比。在可见光区域,样品具有很好的透光率,T〉85％。明显的吸收发生在波长小于220nm时。通过Tauc公式可以估算出,样品的带隙在5．051到5．547eV范围内变化。 相似文献
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未来聚变堆中,液态金属作为最有前景的面向等离子体部件之一,会同时受到超强磁场和高温等离子体的作用,离开原位置而进入堆芯等离子体中.本文列出3种具有代表性的不稳定现象并进行综合分析:1)由等离子体轰击液态金属引起的溅射现象,2)液态金属在磁场和电场共同作用下直接进入等离子体的飞溅现象和3)已经进入等离子体内部的金属液滴再次落下与液膜发生碰撞的现象.前人已经对溅射和液滴撞击液膜现象进行了深入研究.本文对前人的研究成果进行整合与分析,提出新的实验构想,探究磁场和电场作用下液态金属飞溅现象的形成机理.实验研究发现液态金属自由表面会逐渐长高,直至液态金属发生自由表面飞溅,飞溅的液滴能脱离液态金属"山峰"并落下,伴有二次液滴的形成. 相似文献
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Aluminum nitride （AlN） thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency （RF） reactive magnetron sputtering. Based on the analysis of Berg＇s hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential （002） orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction （XRD） analysis, the full width at half maximum （FWHM） of AlN （002） was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN. 相似文献
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本文采用磁控溅射法制备了HfOxNy高介电薄膜，结合XRD、XPS等手段研究了退火温度对薄膜的结构和化学键态的影响，发现N的掺入使Hf4f峰位向低能方向移动．而随着退火温度的升高，Hf4f的双峰峰位向着高结合能的方向移动，这表明N的含量随着退火温度的升高而降低．XRD结果显示N的掺人能提高薄膜的晶化温度． 相似文献
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采用IBS法在锡青铜衬底上溅射沉积Sm-Fe非晶态超磁致伸缩薄膜,研究衬底的表面状态和薄膜热处理对Sm-Fe薄膜磁致伸缩性能的影响.实验结果表明,锡青铜衬底状态对Sm-Fe超磁致伸缩薄膜磁伸性能有很大影响.样品经过200℃真空热处理后,100 mT内dλ/dH值从制备态Sm-Fe薄膜的0.71×10-3 T-1提高到2.48×10-3 T-1,薄膜低场磁敏性得到显著提高. 相似文献
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本文采用磁控溅射法制备Ti、NdFeB薄膜,并研究分析了工艺参数对Ti薄膜及NdFeB磁性薄膜厚度的影响,这些工艺参数是溅射类型、溅射时间、基靶距。 相似文献
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Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively. 相似文献