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用有限元计算方法研究了温度载荷作用下异质结构界面端部区域的应力分布以及端部几何构形的影响，分析了在既有材料性质突变又有端部几何构形突变时，由于材料和几何构形这两种因素所造成的应力集中问题．研究结果表明：由于温度的变化，在界面层端部存在着很高的应力集中；界面端部的影响区域很小，仅在γ＜０．４ｍｍ的区域内．研究还表明：改变界面端部的几何形状可以有效地缓解端部应力集中程度，特别是减小了界面层上剥离应力σｙ的峰值．本文还用实验方法测量了界面端部区域的热变形并对端部几何钝化问题以及减小应力集中的方法进行了讨论 相似文献
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Mechanical properties of micro-structured porous silicon film (PS) were studied combining X-ray diffraction with micro-Raman spectroscopy. The micro-structured porous silicon samples with different porosities ranging from 30.77% to 96.25% were obtained by chemical etching. Lattice parameters of the samples were measured using X-ray diffraction and its maximal change is up to 1.0%. This lattice mismatch with the bulk silicon substrate may introduce residual stress to the porous film. The residual stress measurement by micro-Raman spectroscopy reveals that the maximum of tensile residual stress has reached GPa level in the porous film. Moreover, the lattice mismatch and its corresponding residual stress are increasing with the porosity of PS, but average elastic modulus is about 14.5 GPa, one order of magnitude lower than that of substrate Si. The mechanical properties of PS have aclose relation with its micro-pore structure. 相似文献
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