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针对单次自相关方法只能测量一个脉宽的缺点,提出一种改进的单次相关方法测量超短激光脉冲全空域中不同空间位置的时空特性.通过实验测量了钛宝石激光器输出飞秒激光脉冲的时空特性,结果表明飞秒激光脉冲全空域中不同位置的复杂空间特性得以精密测量;不同空间位置的时间脉宽不同,它们服从高斯分布;当飞秒激光脉冲经过二硫化碳非线性介质传输后,随着输入平均功率的增加,同一空间位置的时间脉宽呈现慢慢变窄的趋势.实验结果验证了所提方法可以有效地测量超短激光脉冲全空域中不同空间位置的时空特性. 相似文献
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Luzhi Zhang Jiahui Liang Chenyu Jiang Zenghe Liu Lijie Sun Shuo Chen Huixia Xuan Dong Lei Qingbao Guan Xiaofeng Ye Zhengwei You 《国家科学评论(英文版)》2021,8(5)
Elastomers are essential for stretchable electronics, which have become more and more important in bio-integrated devices. To ensure high compliance with the application environment, elastomers are expected to resist, and even self-repair, mechanical damage, while being friendly to the human body. Herein, inspired by peptidoglycan, we designed the first room-temperature autonomous self-healing biodegradable and biocompatible elastomers, poly(sebacoyl 1,6-hexamethylenedicarbamate diglyceride) (PSeHCD) elastomers. The unique structure including alternating ester-urethane moieties and bionic hybrid crosslinking endowed PSeHCD elastomers superior properties including ultrafast self-healing, tunable biomimetic mechanical properties, facile reprocessability, as well as good biocompatibility and biodegradability. The potential of the PSeHCD elastomers was demonstrated as a super-fast self-healing stretchable conductor (21 s) and motion sensor (2 min). This work provides a new design and synthetic principle of elastomers for applications in bio-integrated electronics. 相似文献
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采用电磁诱导透明技术可以实现慢光速,其对应正常色散（dn／dω〉0或d ng/dω〉0）,而采用电磁诱导吸收技术可以实现超光速甚至负群速,其对应反常色数（dn／dω〈0或d ng/dω〈0）．目前慢光速和超光速的研究已成为相对论、量子力学、电子学和信息论等交叉学科的研究热点． 相似文献
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Debabrata Goswami 《Resonance》2005,10(6):8-14
Quantum computing exploits the quantum mechanical nature of matter to exist in multiple possible states simultaneously. Building
up on the digital binary logic of bits, quantum computing is built on the basis of interacting two-level quantum systems or
‘qubits’ that follow the laws of quantum mechanics. Addressability of the quantum system and its fragility to fidelity are
the major issues of concern, which if addressed appropriately, will enable this new approach to revolutionize the present
form of computing.
Debabrata Goswami is at the Department of Chemistry, Indian Institute of Technology Kanpur, where he explores the applications
of ultrafast shaped pulses to bio-imaging, coherent control, high-speed communication and quantum computing. 相似文献
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使用飞秒瞬态反射-透射技术研究了金和铜纳米薄膜的电子和晶格动力学,应用双温和Curde近似模型分析了金属薄膜的非平衡热传导动力学.假设在瞬态反射中电子-晶格耦合常数为常数的情况下,计算超快脉冲加热后的电子和晶格温度.金和铜纳米薄膜的反射和透射信号在初始2 ps内相似,随后时间里信号明显不同,透射模式下的电子-晶格耦合效应要比反射模式下的更强和更敏感.这是由于沿着膜厚方向的温度变化受到金属薄膜和基底间的界面散射影响造成的.在研究半透明薄膜的超快动力学过程中,需要同时考虑反射和透射情况. 相似文献
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Zhengwei Zhang Peng Chen Xiangdong Yang Yuan Liu Huifang Ma Jia Li Bei Zhao Jun Luo Xidong Duan Xiangfeng Duan 《国家科学评论(英文版)》2020,7(4):737
Monolayer transition metal dichalcogenides (TMDs) have attracted considerable attention as atomically thin semiconductors for the ultimate transistor scaling. For practical applications in integrated electronics, large monolayer single crystals are essential for ensuring consistent electronic properties and high device yield. The TMDs available today are generally obtained by mechanical exfoliation or chemical vapor deposition (CVD) growth, but are often of mixed layer thickness, limited single crystal domain size or have very slow growth rate. Scalable and rapid growth of large single crystals of monolayer TMDs requires maximization of lateral growth rate while completely suppressing the vertical growth, which represents a fundamental synthetic challenge and has motivated considerable efforts. Herein we report a modified CVD approach with controllable reverse flow for rapid growth of large domain single crystals of monolayer TMDs. With the use of reverse flow to precisely control the chemical vapor supply in the thermal CVD process, we can effectively prevent undesired nucleation before reaching optimum growth temperature and enable rapid nucleation and growth of monolayer TMD single crystals at a high temperature that is difficult to attain with use of a typical thermal CVD process. We show that monolayer single crystals of 450 μm lateral size can be prepared in 10 s, with the highest lateral growth rate up to 45 μm/s. Electronic characterization shows that the resulting monolayer WSe2 material exhibits excellent electronic properties with carrier mobility up to 90 cm2 V−1 s−1, comparable to that of the best exfoliated monolayers. Our study provides a robust pathway for rapid growth of high-quality TMD single crystals. 相似文献
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