| CMOS技术的现状与展望综述 |
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| 引用本文： | 王光伟,曹继华,宋延民,张建民.CMOS技术的现状与展望综述[J].天津工程师范学院学报,2005,15(1):10-12. |
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| 作者姓名： | 王光伟 曹继华 宋延民 张建民 |
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| 作者单位： | 天津工程师范学院电子工程系,天津,300222 |
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| 摘 要： | 概述了几十年来集成电路基本单元CMOS晶体管特征尺寸的缩小以及由此带来电路性能的提高和出现的问题。其主要的挑战集中在研发成本的上升、能耗的增大和可靠性问题。阐明了驱动CMOS晶体管尺寸缩小的原因除了技术进步，更在于电路可售出成本的下降。
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| 关 键 词： | CMOS晶体管 半导体器件 特征尺寸缩小 集成电路 芯片 集成电路 |
| 文章编号： | 1673-1018(2005)01-0010-03 |
| 修稿时间： | 2004年12月28 |
Current status and prospects of CMOS technology |
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| WANG Guang-wei,CAO Ji-hua,SONG Yan-min,ZHANG Jian-min.Current status and prospects of CMOS technology[J].Journal of Tianji University of Technology and Education,2005,15(1):10-12. |
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| Authors: | WANG Guang-wei CAO Ji-hua SONG Yan-min ZHANG Jian-min |
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| Abstract: | The downscaling of CMOS, the basic unit of integrated circuit in the past decades is summarized briefly. It brings about the upgrade of the circuit performances and some challenges. The main challenges focus on the increase of R&D cost, power consumption and possible reliability. It is elucidated that the technological progress, especially the decrease of salable cost, is responsible for the downsizing of CMOS. |
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| Keywords: | CMOS transistor semiconductor device feature size downsizing integrated circuit chip |
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