| Co-Pi和Cu2O共修饰TiO2薄膜及其光电化学性质研究 |
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| 引用本文： | 姜春香,沈明荣.Co-Pi和Cu2O共修饰TiO2薄膜及其光电化学性质研究[J].常熟理工学院学报,2014(4):51-54. |
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| 作者姓名： | 姜春香 沈明荣 |
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| 作者单位： | 苏州大学物理科学与技术学院,江苏苏州215006 |
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| 基金项目： | 基金项目：高等学校博士学科点专项科研基金（博导类）资助项目“Cu2O过渡层提高PZT铁电梯度薄膜光电转换效率的研究”（91233109） |
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| 摘 要： | 用阳极氧化法在Ti基片上制备出TiO2薄膜,然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面.通过扫描电镜、X-射线衍射和光电化学性质测试,发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积,光电流显著提高.而先沉积Cu2O后沉积Co-Pi,则会使Cu2O还原为Cu,同时形貌发生改变.特别地,沉积300秒Co-Pi后再沉积Cu2O颗粒,能得到200 mA/cm2的最大光电流.
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| 关 键 词： | TiO2薄膜 Co-Pi Cu2O 电化学沉积 光电化学性质 |
Fabrication and Photoelectrochemical Properties of Co-Pi and Cu2O Co-decorated TiO2 films |
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| JIANG Chun-xiang,SHEN Ming-rong.Fabrication and Photoelectrochemical Properties of Co-Pi and Cu2O Co-decorated TiO2 films[J].Journal of Changshu Institute of Technology,2014(4):51-54. |
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| Authors: | JIANG Chun-xiang SHEN Ming-rong |
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| Institution: | (School of Physical Science and Technology, Soochow University, Suzhou, 215006, China) |
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| Abstract: | TiO2 film is prepared on Ti substrates by anodic oxidation method. Then Co-Pi and Cu2O particles are fabricated on TiO2 flat surface using a facial electrochemical deposition method. Scanning electron microsco-py, X-ray diffraction and photoelectrochemical properties reflect that depositing Co-Pi particles in advance on the surface of TiO2 thin films can prevent Cu2O forming stacked particle structure, increase the photocurrent sig-nificantly, and deposit Co-Pi after Cu2O makes Cu2O reduction to Cu and that at the same time the morphology changes a lot. Specifically, when the deposition time of Co-Pi is set to be 300 s, the structure of TiO2/Co-Pi/Cu2O can get the maximum photocurrent of 200 A cm-2 . |
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| Keywords: | Co-Pi Cu2O Titatium oxide film Co-Pi Cuprous oxide electrochemical deposition method photoelectrochemi-cal properties |
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