| Structure and Dielectric Properties of Sb2O5-Doped ZrO2-SnO2-TiO2 Microwave Ceramics |
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| 作者姓名： | 陈力颖 吴顺华 |
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| 作者单位： | School of Electronic Information Engineering Tianjin University，School of Electronic Information Engineering Tianjin University，Tianjin 300072 China Tianjin 300072 China |
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| 基金项目： | Supported by Natural Science Foundation of Tianjin (No.06YFJMJC01000)，the High Technique Research and Development Pro-gram of China (No.2001AA325110). |
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| 摘 要： | The microwave frequency band is generally con-sidered in the range of 0.3—3 000 GHz. Its impor-tance is recognizable in the current growth of micro-wave communications systems which make use of thesuperior information density. Many kinds of dielectricmaterials have been developed for microwave applica-tions1,2]. Among them, solid solution ZrO2-SnO2-TiO2(ZST) has a higher dielectric constant, a highquality factor (Q) value and a lowtemperature coeffi-cient of resonant frequency (TCF). B…
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| 关 键 词： | 陶瓷工艺 微波介电性能 Sb2O5搀杂 微波陶瓷 ZrO2-SnO2-TiO2 |
| 收稿时间： | 2006-04-11 |
Structure and Dielectric Properties of Sb2O5-Doped ZrO2-SnO2-TiO2 Microwave Ceramics |
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| CHEN Liying,WU Shunhua.Structure and Dielectric Properties of Sb2O5-Doped ZrO2-SnO2-TiO2 Microwave Ceramics[J].Transactions of Tianjin University,2006,12(6):438-441. |
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| Authors: | CHEN Liying WU Shunhua |
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| Abstract: | The microwave dielectric properties of ZrO2-SnO2-TiO2 (ZST) system ceramics were studied as a function of the amount of Sb2O5 dopant.With the addition of 0-0.5% Sb2O5( molar ratio),the substitution of Ti4+ ions with Sb5+ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies.When the amount of Sb5+ increased further (above 0.5%),Q was decreased by increasing the electron concentration.When the system doped with 0.5% Sb2O5 was sintered at 1 150 ℃ for 6 h,the relative dielectric constant ε,Qf0,and the temperature coefficient of resonant frequency (TCF) were 38.46,44 500 GHz,20.0 ×10-6/℃,respectively,at 6 GHz. |
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| Keywords: | ceramics microwave dielectric properties Sb_2O_5 dopant |
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