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Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod |
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| Authors: | Chun-li Zhang Xiao-yuan Wang Wei-qiu Chen Jia-shi Yang |
| Institution: | 1. Department of Engineering Mechanics, Zhejiang University, Hangzhou, 310027, China 3. Soft Matter Research Center, Zhejiang University, Hangzhou, 310027, China 4. Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Hangzhou, 310027, China 2. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0526, USA |
| Abstract: | We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod. |
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