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氮化钾基材料的合成研究进展
引用本文:彭必先,钱海生,岳军,陈丽娟,王崇臣,张丽娟.氮化钾基材料的合成研究进展[J].中国科学院研究生院学报,2005,1(5):536-544.
作者姓名:彭必先  钱海生  岳军  陈丽娟  王崇臣  张丽娟
作者单位:1. 中国科学院理化技术研究所,北京,100101
2. 中国科学技术大学化学与材料科学学院,合肥,230026
3. 北京化工大学理学院应用化学系,北京,100029
摘    要:氮化镓,是直接带隙半导体材料,在室温下有很宽的带隙(3.39eV)。它在光电子器件如蓝光、紫外、紫光等光发射二极管和激光二极管方面有着重要的应用。本文系统地介绍了氮化镓的各种制备方法,对其结构和性能关系的研究,揭示了它在半导体领域广泛且重要的应用前景。

关 键 词:氮化镓  半导体  制备方法  应用
文章编号:1002-1175(2005)05-0536-09
修稿时间:2003年6月17日

The Research Progress in Synthesis and Application of Gallium Nitride Based Materials
PENG Bi-Xian,QIAN Hai-Sheng,YUE Jun,CHEN Li-Juan,WANG Chong-Chen,ZHANG Li-Juan.The Research Progress in Synthesis and Application of Gallium Nitride Based Materials[J].Journal of the Graduate School of the Chinese Academy of Sciences,2005,1(5):536-544.
Authors:PENG Bi-Xian  QIAN Hai-Sheng  YUE Jun  CHEN Li-Juan  WANG Chong-Chen  ZHANG Li-Juan
Institution:1 Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China; 2 School of Chemistry and Material Science, University of Science and Technology of China, Hefei 230026, China; 3 Department of applied chemistry, school of science, Beijing University of chemical technology, Beijing 100029, China
Abstract:Gallium nitride is a novel kind of semiconductor,whose direct band gap is 3.39eV at the room temperature. It has been proved to be a promising material for electronic and photoelectric devices. A good many of its growth methods have been discovered,and some of them had been implemented in production practice with monitoring systems. Some comparisons were made between different methods. The structure-performance dependence of GaN itself, GaN-based family and multinitrides have been summarized. The main fields of GaN-based material were presented. GaN-based material is being considered to be the excellent candidate of electronic device potentially used in high-temperature,high-power and worst environment surroundings.
Keywords:gallium nitride  semiconductor  preparation  application
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