| 采用电沉积技术制备铋纳米线阵列 |
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| 引用本文： | 王为,王惠,巩运兰.采用电沉积技术制备铋纳米线阵列[J].天津大学学报(英文版),2001,7(3):207-209. |
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| 作者姓名： | 王为 王惠 巩运兰 |
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| 作者单位： | 天津大学化工学院, |
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| 基金项目： | the National Natural Science Foundation of China(No.50 0 71 0 4 0 ) |
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| 摘 要： | 采用电沉积技术 ,通过将铋沉积到氧化铝多孔膜的纳米级微孔内 ,制备铋纳米线阵列材料 .实验发现 ,温度对电沉积过程有显著影响 ,镀液中铋以简单 Bi3 离子形式存在有助于金属铋沉积到氧化铝多孔膜的纳米级微孔内 .由于 Bi3 离子在氧化铝模板的纳米级微孔内扩散困难 ,故采取脉冲电沉积工艺 .XRD分析显示 ,通过电沉积工艺制备出了 Bi纳米线材料
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| 关 键 词： | 制备技术 Bi纳米线 电沉积 |
FABRICATION OF Bi NANOWIRE ARRAY BY ELECTRODEPOSITION TECHNOLOGY |
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| WANG Wei,WANG Hui,GONG Yun-lan.FABRICATION OF Bi NANOWIRE ARRAY BY ELECTRODEPOSITION TECHNOLOGY[J].Transactions of Tianjin University,2001,7(3):207-209. |
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| Authors: | WANG Wei WANG Hui GONG Yun-lan |
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| Abstract: | In the fabrication of Bi nanowire array thermoelectric materials,electrodeposition technology has been used to deposit bismuth into the nanopores of anodic alumina porous films.The experiments show that the temperature significantly affects the electrodepositing process,and the simple form of Bi 3 in the solutions is helpful to the deposition of metal Bi.The pulse plating technique is necessary for the electrodeposition because of the diffusive difficulty of Bi 3 into the nanopores of the films.The XRD analysis indicates that Bi nanowire arrays have been manufactured by this technology. |
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| Keywords: | fabrication Bi nanowire electrodeposition |
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