| 不同沉积气压制备微晶硅薄膜的表面粗糙度标度行为研究 |
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| 引用本文： | 丁艳丽,乔红贞,谷锦华.不同沉积气压制备微晶硅薄膜的表面粗糙度标度行为研究[J].商丘师范学院学报,2011(12):32-35. |
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| 作者姓名： | 丁艳丽 乔红贞 谷锦华 |
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| 作者单位： | 商丘师范学院物理与信息工程系;郑州大学物理工程学院材料物理教育部重点实验室; |
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| 摘 要： | 采用VHF-PECVD技术制备了两个气压系列不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明：沉积气压Pg=70 Pa时,生长指数β=0.22±0.023,对应有限扩散生长模式;Pg=300 Pa时,β=0.81±0.099,其超出标度理论中β最大值为0.5范围,出现异常标度行为,表明：在微晶硅薄膜生长中还要考虑其它粗糙化因素（如阴影作用会增加薄膜表面的粗糙化程度,使生长指数β增大）.
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| 关 键 词： | 微晶硅薄膜 表面粗糙度 椭圆偏振光谱 生长指数 |
Studies on sueface roughness scaling of microcrystalline silicon films prepared at different deposition pressure |
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| DING Yanli,QIAO Hongzhen,GU Jinhua.Studies on sueface roughness scaling of microcrystalline silicon films prepared at different deposition pressure[J].Journal of Shangqiu Teachers College,2011(12):32-35. |
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| Authors: | DING Yanli QIAO Hongzhen GU Jinhua |
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| Institution: | DING Yanli1,2,QIAO Hongzhen1,GU Jinhua2(1.Department of Physics and Information Engineering,Shangqiu Teachers College,Shangqiu 476000,China,2.School of Physical Engineering and Material Physics Laboratory,Zhengzhou University,Zhengzhou 450052,China) |
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| Abstract: | The scaling behaviour of surface roughness evolution of microcrystalline silicon（μc-Si：H） films prepared by veryhigh frequency plasma-enhanced chemical vapour deposition（VHF-PECVD） has been investigated by using a spectroscopic ellipsometry（SE） technique.The results show that films deposited at Pg = 70 Pa,the growth exponent β is about.0.22,which corresponds to the definite diffusion growth.However,films deposited at Pg = 300 Pa show abnormal scaling behavior with the exponent β of about.0.81,which is much larger than 0.5 of zero diffusion limit in the scaling theory.This implies that some roughening increasing mechanism such as shadowing effect contributes to the growing surface. |
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| Keywords: | microcrystalline Si thin film surface roughness spectroscopic ellipsometry the growth exponent |
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