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Ar/O_2比和基片温度对射频反应磁控溅射法制备钢基SiO_2薄膜亲水性的影响
引用本文:高立华.Ar/O_2比和基片温度对射频反应磁控溅射法制备钢基SiO_2薄膜亲水性的影响[J].洛阳师范学院学报,2012,31(5):34-36,45.
作者姓名:高立华
作者单位:三明学院物理与机电工程学院,福建三明,365004
基金项目:福建省教育厅A类自然科学研究项目(JA10268)
摘    要:在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳.

关 键 词:钢基SiO2薄膜  亲水性  射频反应磁控溅射  氩氧分压比  基片温度

Influence of the Ratio of Oxygen to Argon and Substrate Temperature on the Hydrophilic Property of SiO2 Thin Films Coated on Steel by RF Reactive Magnetron Sputtering
GAO Li-hua.Influence of the Ratio of Oxygen to Argon and Substrate Temperature on the Hydrophilic Property of SiO2 Thin Films Coated on Steel by RF Reactive Magnetron Sputtering[J].Journal of Luoyang Teachers College,2012,31(5):34-36,45.
Authors:GAO Li-hua
Institution:GAO Li-hua(School of Physics and Mechanical & Electrical Technology,Sanming University,Sanming 365004,China)
Abstract:SiO2 thin films are prepared at a total pressure of 1.9 Pa in mixed Ar and O2 atmosphere,on stainless steel substrates by RF reactive magnetron sputtering.The surface morphology and hydrophilic property of the films are analyzed.It is indicated that SiO2 thin films shows the optimum hydrophilicity at Ar/O2 ratio of 6:4 and 90 ℃ of substrate temperature.
Keywords:SiO2 thin films based steel  hydrophilic property  RF reactive magnetron sputtering  ratio of oxy- gen to argon  substrate temperature
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