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CzSi晶体生长传热特性的数值研究
引用本文:张晶,;程桂平,;饶婷婷.CzSi晶体生长传热特性的数值研究[J].赣南师范学院学报,2014(3):26-29.
作者姓名:张晶  ;程桂平  ;饶婷婷
作者单位:[1]皖南医学院麻醉学院,安徽芜湖241000; [2]皖南医学院医用物理学教研室,安徽芜湖241000
摘    要:在提拉法晶体生长中,坩埚内的熔体受到多种驱动力的作用,主要包括:由熔体内部温差驱动的浮力、自由表面温度梯度导致的热毛细力、坩埚和晶体旋转产生的离心力和科里奥力,因而坩埚内的熔体流动表现出复杂的非线性流动状态.通过数值计算,模拟熔体内的对流流动、温度分布及晶体生长界面的形态,研究了晶体生长过程中,热质传输从对称到非对称的演化以及对流对固液面表面造成的影响.

关 键 词:晶体生长  对流  数值模拟

Numerical Study on Heat Transfer Characteristics in Cz Growth of Si Crystal
Institution:ZHANG jing, CHENG Guiping, RAO Tingting (School of Anesthesia, Wanaan Medical College, Anhui 241000, China)
Abstract:In the Czochralski crystal growth,melt in the crucible which under various driving force,mainly includes: buoyancy,thermalcapillary force,the centrifugal force and Coriolis force,exhibits complex non-linear flow. The convective flow,temperature distribution and growth interface of crystal in the melt for Si crystal growth with the radius of 100mm are simulated by numerical calculation in this paper and the effect of heat and mass transfer characteristics and convection in crystal growth on the solid- liquid surface is studied. It is found that solid-liquid surface is no longer smooth because of the complex three-dimensional strong convection caused by thermalcapillary force and buoyancy due to the existence of temperature gradient and density gradient in the crucible.
Keywords:crystal growth  convection  Numerical simulation
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