| In的掺杂对化学水浴沉积SnS薄膜电阻率的影响 |
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| 引用本文： | 葛艳辉,郭余英,史伟民,邱永华,魏光普.In的掺杂对化学水浴沉积SnS薄膜电阻率的影响[J].上海大学学报(英文版),2007,11(4):403-406. |
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| 作者姓名： | 葛艳辉 郭余英 史伟民 邱永华 魏光普 |
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| 作者单位： | School of Materials Science and Engineering Shanghai University，School of Materials Science and Engineering，Shanghai University，School of Materials Science and Engineering，Shanghai University，School of Materials Science and Engineering，Shanghai University，School of Materials Science and Engineering，Shanghai University，Shanghai 200072，P.R.China，Shanghai 200072，P.R.China，Shanghai 200072，P.R.China，Shanghai 200072，P.R.China，Shanghai 200072，P.R.China |
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| 摘 要： | SnS and SnS：In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS：In films were studied by X-ray diffraction （XRD） and scanning electron microscope （SEM） respectively. Energy dispersive spectroscopy （EDS） showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS：In films were evaluated from the optical transmission spectra.
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| 关 键 词： | 锡硫化物 化学反应物 沉积物 参杂 |
| 收稿时间： | 16 September 2005 |
| 修稿时间： | 2005-09-16 |
Influence of In-doping on resistivity of chemical bath deposited SnS films |
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| GE Yan-hui,GUO Yu-ying,SHI Wei-min,QIU Yong-hua,WEI Guang-pu.Influence of In-doping on resistivity of chemical bath deposited SnS films[J].Journal of Shanghai University(English Edition),2007,11(4):403-406. |
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| Authors: | GE Yan-hui GUO Yu-ying SHI Wei-min QIU Yong-hua WEI Guang-pu |
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| Institution: | School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China |
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| Abstract: | SnS and SnS:In films were deposited onto glass substrates by chemical bath technique.The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Energy dispersive spectroscopy (EDS) showed the existence of In in the films.The undoped SnS film exhibited a rather high resistivity and InCl_3 could reduce the resistivity of these films by two orders approximately.The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra. |
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| Keywords: | tin sulfide chemical bath deposition doping |
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