| 激光在集成电路纳米超浅结形成中的应用综述 |
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| 引用本文： | 王光伟,宋延民,张建民,郑宏兴.激光在集成电路纳米超浅结形成中的应用综述[J].天津工程师范学院学报,2006,16(3):19-23. |
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| 作者姓名： | 王光伟 宋延民 张建民 郑宏兴 |
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| 作者单位： | 天津工程师范学院,电子工程系,天津,300222 |
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| 基金项目： | 天津市高等学校科技发展基金 |
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| 摘 要： | 国际半导体技术路线图(ITRSZ(X)4)规定，2005年，集成电路(IC)的特征尺寸应小于0.1卜m，即IC工艺水平进入纳米时代。如此小的尺寸给IC制造技术提出一些严峻的挑战。在这些挑战中，MOS器件超浅结(USJ)形成以及掺杂技术尤为值得关注。在65 nm和45 nm工艺时代，结深要分别控制在17
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| 关 键 词： | 激光退火 激光掺杂 集成电路 纳米尺度 超浅结 |
| 文章编号： | 1673-1018(2006)03-0019-05 |
| 收稿时间： | 05 18 2006 12:00AM |
| 修稿时间： | 2006年5月18日 |
Study of laser application in the formation of nano-scale ultra-shallow junctions of integrated circuits |
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| WANG Guang-wei,SONG Yan-min,ZHANG Jian-min,ZHENG Hong-xing.Study of laser application in the formation of nano-scale ultra-shallow junctions of integrated circuits[J].Journal of Tianji University of Technology and Education,2006,16(3):19-23. |
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| Authors: | WANG Guang-wei SONG Yan-min ZHANG Jian-min ZHENG Hong-xing |
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| Institution: | Department of Electronic Engineering, Tianjin University of Technology and Education, Tianjin 300222, China |
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| Abstract: | The application of laser in the formation of nano-scale uhra-shallow junctions of integrated circuits has been briefly summarized. It is indicated that the current technique of ion implantation with rapid thermal annealing widely used in the junction fabrication of integrated circuits will not meet the requirement of the formation of nano-scale ultra-shallow source or drain junctions and its reason. And the unique virtue of laser and its feasibility of being adopted in the formation of nano-scale ultra-shallow junctions are analyzed. Nano-scale ultra-shallow junctions demand that the junction depth and dopant distribution should be accurately controllable and the junction resistance should be as low as possible. The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper. |
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| Keywords: | laser annealing laser doping integrated circuit nano-scale ultra-shallow junction empha |
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