| 980nm激光器有源区的设计与分析 |
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| 引用本文： | 何国荣,刘俊.980nm激光器有源区的设计与分析[J].深圳信息职业技术学院学报,2009,7(4):44-47. |
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| 作者姓名： | 何国荣 刘俊 |
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| 作者单位： | 深圳信息职业技术学院电子通信技术系,广东,深圳,518029 |
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| 基金项目： | 深圳信息职业技术学院青年自然科学基金项目 |
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| 摘 要： | 有源区设计是半导体激光器设计的核心部分，其材料、参数的选择将直接决定激光器的最终属性，而有源区设计的关键之处在于其能带结构分析。利用四带模型和固体模型理论可研究量子阱有源区的价带色散关系，进而推算出增益谱、透明载流子浓度等重要参数。本文针对GaAs基980nm激光器有源区的InGaAs／GaAsP应变补偿量子阱和InCaAs／GaAs普通应变量子阱结构进行理论分析比较。分析结果表明，应变补偿量子阱具有带阶大，峰值增益高，波长漂移速度更低和透明载流子浓度更低等优势，这意味着采用该有源区结构的激光器将有更优越的光电性质。
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| 关 键 词： | 应变补偿 垂直腔面发射激光器（VCSEL） 色散 |
Theoretical design and analysis of strain compensated quantum well |
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| HE Guorong,LIU Jun.Theoretical design and analysis of strain compensated quantum well[J].Journal of Shenzhen Institute of Information Technology,2009,7(4):44-47. |
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| Authors: | HE Guorong LIU Jun |
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| Institution: | ( Department of Electronic and Communications Technology, Shenzhen Institute of Information and Technology Shenzhen 518029, P.R. China) |
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| Abstract: | Analy dispersions sis of energy band structure is very important for laser design. In this paper, valence-band oth strained compensated quantum wells InGaAs/GaAsP and normal strained quantum wells InGaAs/GaAs were calculated for comparison by means of four-band theory and model-solid theory. It was shown that strained compensated quantum wells possesses advantages such as wider band offset, higher peak gain, lower wavelength drifting velocity and transparent carrier density, etc. That means better performance for laser diodes. |
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| Keywords: | strain compensated vertical cavity surfaces emitting laser （VCSEL） dispersion |
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