| Ta掺杂SnO2薄膜的散射机制 |
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| 引用本文： | 吴海滨,东艳晖,陈永志.Ta掺杂SnO2薄膜的散射机制[J].石家庄学院学报,2011,13(6):36-40. |
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| 作者姓名： | 吴海滨 东艳晖 陈永志 |
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| 作者单位： | 石家庄学院物理系,河北石家庄,050035 |
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| 基金项目： | 石家庄市科学研究与发展指导计划 |
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| 摘 要： | 通过射频磁控溅射的方法制备了Ta掺杂SnO2薄膜,研究了薄膜的结构和低温下电阻率随磁场的变化规律.测量表明低温下呈现出负的磁电阻,但是,二维、三维弱局域理论均不能解释样品中出现的负的磁电阻现象.综合考虑了三阶微绕近似的s-d交换哈密顿的半经验公式Δρ/ρ=-B12ln(1+B22H2))和双能带模型的相关公式Δρ/ρ=B32H/(1+B42H2)拟合了样品在5 T以下的磁电阻的数据,理论和实验符合得很好.结果表明Ta掺杂SnO2薄膜中的磁电阻源于局域磁矩的传导电子散射.
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| 关 键 词： | SnO2 薄膜 磁控溅射 局域磁矩 |
Scatter Mechanism in Ta Doped SnO2 thin film at low temperature |
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| WU Hai-bin,DONG Yan-hui,CHEN Yong-zhi.Scatter Mechanism in Ta Doped SnO2 thin film at low temperature[J].Journal of Shijiazhuang University,2011,13(6):36-40. |
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| Authors: | WU Hai-bin DONG Yan-hui CHEN Yong-zhi |
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| Institution: | WU Hai-bin1,DONG Yan-hui1,2,CHEN Yong-zhi1(1.Dept.of Physics,Shijiazhuang University,Shijiazhuang,Hebei 050035,China,2.School of Physics Science & Information Engineering,Hebei Normal University,Hebei 050016,China) |
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| Abstract: | Tantalum-doped Tin oxide thin films were prepared by RF magnetron sputtering method and their structura and low temperature magnetotransport properties were investigated. The magnetotransport properties measurement show negative magnetoresistance at all measuring temperatures. We fitted the magnetoresistance data of the samples with synthesized semiempirical expression △ρ/ρ=-B1^2ln（1＋BH）） and Two band modle equation Δρ/ρ=B3^2H/（1＋BH） The theory and experiment are in excellent agreement. This strongly suggests that the magnetoresistance in SnO2：Ta film originates from the scattering of conduction electrons due to localized magnetic moments. |
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| Keywords: | SnO2 thin film magnetron sputtering localized magnetic moments |
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