| 退火温度对Ce掺杂ZnO薄膜光学特性影响的研究 |
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| 引用本文： | 崔舒,王超,孟庆杰.退火温度对Ce掺杂ZnO薄膜光学特性影响的研究[J].通化师范学院学报,2012,33(10):16-17,37. |
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| 作者姓名： | 崔舒 王超 孟庆杰 |
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| 作者单位： | 通化师范学院物理学院,吉林通化,134002 |
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| 摘 要： | 采用溶胶凝胶(sol-gel)法,在普通载玻片和Si-SiO2衬底上成功制备Ce掺杂ZnO薄膜.利用X射线衍射仪(XRD)、原子力显微镜(AFM)及光致荧光光谱(PL)对样品的结构、形貌和光学特性进行表征.XRD谱表明大部分样品都有较好的c轴择优取向,而且随着退火温度的升高择优取向明显改善.PL谱中在390nm附近可观察到明显发光峰,退火温度升高能够提高本征发光峰强度,抑制可见光区发光强度.用AFM观察到的样品表面形貌表明,退火温度提高使样品表面更加平整,同时粒径变大.
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| 关 键 词： | Ce掺杂ZnO薄膜 退火温度 光学特性 |
Impact of Annealing Temperature on Ce - doped ZnO Thin Films |
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| CUI Shu,WANG Chao,MENG Qing-jie.Impact of Annealing Temperature on Ce - doped ZnO Thin Films[J].Journal of Tonghua Teachers College,2012,33(10):16-17,37. |
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| Authors: | CUI Shu WANG Chao MENG Qing-jie |
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| Institution: | CUI Shu, WANG Chao, MENG Qing - jie (Faculty of Physics, Tonghua Normal University, Tonghua, Jilin 134002, China) |
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| Abstract: | Ce -doped ZnO thin films were successfully prepared on ordinary glass slide and Si -SiO2 substrate by sol -gel technique. The structure, morphology and optical characteristics of the sample were characterized by X - ray diffraction （ XRD ）, atomic force microscope （ AFM ） and photoluminescence （PL） spectroscopy respectively. |
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| Keywords: | Ce -doped ZnO thin films annealing temperature optical characteristic |
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