| 水平沟道场控晶闸管的设计与制作 |
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| 引用本文： | 郑海东,叶润涛,林新明.水平沟道场控晶闸管的设计与制作[J].科技通报,1993(3). |
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| 作者姓名： | 郑海东 叶润涛 林新明 |
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| 作者单位： | 浙江大学信息与电子工程系，浙江大学信息与电子工程系，杭州八达微波技术器件厂 杭州 310008，杭州 310008 |
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| 摘 要： | 水平沟道场控晶闸管是一种新型结构的场控晶闸管,它与一般晶闸管相比具有开关速度快、制作工艺简单、与集成电路工艺兼容等优点.本文概述了这种器件的原理、设计与制作工艺.
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| 关 键 词： | 水平沟道 场控 晶闸管 |
Design and Fabrication of Lateral Channel Field-Controlled Thyristor |
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| Zheng Haidong,Ye Runtao,Lin Xinming.Design and Fabrication of Lateral Channel Field-Controlled Thyristor[J].Bulletin of Science and Technology,1993(3). |
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| Authors: | Zheng Haidong Ye Runtao Lin Xinming |
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| Institution: | Zheng Haidong;Ye Runtao;Lin Xinming Department of Information & Electronic Engineering Zhejiang University Hangzhou Bardar Microwave Technology Company Ltd. |
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| Abstract: | This paper is to introduce a new structure of field-controlled thyristor with Lateral channel. This device
is possessed of some advantages, such as manufacture simplicity, high switching speed and compatibility with
IC in monlithic mode. The reports about this new structure have not been found in the world until now. The
structure has been fabricated by using V-groove etching instead of boron diffusion. |
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| Keywords: | lateral channel field-controlled thyristor LFCT LSITH |
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