| Extraction of ULSI Interconnect Resistance at High Frequencies |
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| 作者姓名： | 肖夏 菅端端 姚素英 张生才 阮刚 |
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| 作者单位： | [1]SchoolofElectronicInformationEngineering,TianjinUniversity,Tianjin300072,China [2]InstituteofMicroelectronics,FudanUniversity,Shanghai200433,China |
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| 基金项目： | SupportedbyNationalNaturalScienceFoundationofChina(No.60406003)andtheScientificResearchFoundationfortheReturnedOverseasChineseScholars,StateEducationMinistry. |
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| 摘 要： | Correct extraction of the ultra-large-scale integrated (ULSI) interconnect components at hight frequencies is very important for evaluating electrical performances of high-speed ULSI circuits. In this paper, the extraction of the interconnect resistance at high frequencies is derived from the Ohm‘s law and verified by the software FastHenry. The results are also compared with those of another resistance formula originated from the effective area of the current flowing. The applicability of these two formulae is discussed. The influence of the interconnect geometry on the resistance at high frequencies is studied. The computation indicates that the effect of frequency on the resistance is weak when the skin depth is larger than half of the short side of the rectangular interconnect cross section. With further increase of frequency, the resistance increases obviously. Results imply that conductor with a square cross section exhibits the largest resistance for rectangular conductors of constant cross section area.
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| 关 键 词： | 电阻连接 高频率 ULSI 高速电路 |
Extraction of ULSI Interconnect Resistance at High Frequencies |
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| Xiao Xia,JIAN Duanduan,Yao Suying,Zhang Shengcai,RUAN Gang.Extraction of ULSI Interconnect Resistance at High Frequencies[J].Transactions of Tianjin University,2005,11(3):167-171. |
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| Authors: | Xiao Xia JIAN Duanduan Yao Suying Zhang Shengcai RUAN Gang |
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| Institution: | 1. School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
2. Institute of Microelectronics, Fudan University, Shanghai 200433, China |
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| Abstract: | Correct extraction of the ultra-large-scale integrated (ULSI) interconnect components at hight frequencies is very important for evaluating electrical performances of high-speed ULSI circuits.In this paper, the extraction of the interconnect resistance at high frequencies is derived from the Ohm′s law and verified by the software FastHenry.The results are also compared with those of another resistance formula originated from the effective area of the current flowing. The applicability of these two formulae is discussed.The influence of the interconnect geometry on the resistance at high frequencies is studied.The computation indicates that the effect of frequency on the resistance is weak when the skin depth is larger than half of the short side of the rectangular interconnect cross section.With further increase of frequency, the resistance increases obviously. Results imply that conductor with a square cross section exhibits the largest resistance for rectangular conductors of constant cross section area. |
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| Keywords: | interconnect resistance skin effect high frequency ultra-large-scale integrated (ULSI) |
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