| Properties of phosphorus-doped ZnO film deposited by radio-frequency magnetron sputtering |
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| 作者姓名： | ZHU Ren-jiang WANG Nan KONG Chun-yang MA Yong FANG Liang |
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| 作者单位： | Department of |
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| 摘 要： | 1 Introduction a Zinc Oxide (ZnO), a II-VI compound semiconductor with a wide direct band gap of about 3.4 eV 1], has been extensively studied in recent time for their possible applications in short-wavelength light-emitting devices 2], surface wave dev…
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| 关 键 词： | ZnO 磷 掺杂 XRD XPS 氧化物半导体 |
| 文章编号： | 1671-8224（2006）02-0098-04 |
| 收稿时间： | 2005-10-15 |
| 修稿时间： | 2006-03-05 |
Properties of phosphorus-doped ZnO film deposited by radio-frequency magnetron sputtering |
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| ZHU Ren-jiang WANG Nan KONG Chun-yang MA Yong FANG Liang.Properties of phosphorus-doped ZnO film deposited by radio-frequency magnetron sputtering[J].Journal of Chongqing University,2006,5(2):98-101. |
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| Authors: | ZHU;Ren-jiang;WANG;Nan;KONG;Chun-yang;MA;Yong;FANG;Liang |
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| Abstract: | The phosphorus-doped ZnO films were prepared on glass substrate by radio-frequency (RF) magnetron sputtering at different temperature. The properties of ZnO films doped with P2O5 respectively with a mass fraction of 0 and 1% were characterized via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission spectra and room-temperature Hall measurements. The film deposited at room temperature shows more crystallinity with a preferential orientation along c-axis, and exhibits good optical property. XPS analyses indicate most of phosphorus in ZnO:P film form antisite PZn or phosphide compound, resulting in forming a donor state, which is consistent with the result examined by Hall measurement. |
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| Keywords: | ZnO phosphorus-doped X-ray photoelectron spectroscopy |
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