| GaN类探测成像器件的研究进展及其成果 |
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| 引用本文： | 陆苗霞.GaN类探测成像器件的研究进展及其成果[J].科技广场,2011(3). |
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| 作者姓名： | 陆苗霞 |
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| 作者单位： | 应天职业技术学院,江苏,南京,210046 |
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| 摘 要： | GaN材料在光电子和微电子领域中得到广泛的应用,因此它是第三代半导体材料的典型代表。它具有宽的直接带隙、强的原子键、高的热导率、化学稳定性好(几乎不被任何酸腐蚀)等性质和强的抗辐照能力,在光电子、高温大功率器件和高频微波器件应用方面有着广阔的前景。在成像技术方面,GaN类的成像器件包括紫外摄像机和紫外数字照相机。
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| 关 键 词： | GaN 紫外探测 成像器件 |
Research Progress of GaN's Detection Imaging Device |
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| Lu Miaoxia.Research Progress of GaN's Detection Imaging Device[J].Science Mosaic,2011(3). |
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| Authors: | Lu Miaoxia |
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| Institution: | Lu Miaoxia(Yingtian College,Jiangsu Nanjing 210046) |
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| Abstract: | GaN materials are widely applied in optoelectronics and micro-ectronics areas,so it is the third generation of the typical representative of semiconductor materials.It has wide direct bandgap,strong atomic keys,high thermal conductivity,chemical stability(almost not be any acid corrosion) properties and strong anti irradiation ability,in the optoelectronic devices and high frequency and high temperature microwave devices has broad prospects for application.In imaging technology,GaN kind imaging devices incl... |
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| Keywords: | GnN Ultravionet Detector Imaging Device |
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