| 双电子柱形量子点基态能的杂质效应 |
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| 引用本文： | 郑冬梅,王宗篪.双电子柱形量子点基态能的杂质效应[J].三明学院学报,2011,28(5). |
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| 作者姓名： | 郑冬梅 王宗篪 |
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| 作者单位： | 三明学院物理与机电工程学院,福建三明,365004 |
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| 基金项目： | 福建省教育厅科技项目，三明学院大学物理教学团队建设项目 |
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| 摘 要： | 在有效质量和有限高势垒近似下,变分研究了在双电子柱形GaN/Al0.2Ga0.8N量子点中掺入不同类型杂质时,杂质电子体系的基态能随杂质电荷、量子点的高度及杂质位置的变化规律。结果表明,随量子点高度增加,杂质电子体系的基态能单调递减;杂质带负电时,体系的基态能量都比较大,不易形成稳定的束缚态。随着杂质由量子点下界面沿z轴上移至上界面,对于类氢施主杂质,体系的基态能先减小后增大,在z0=1.0 nm处取得极小值;而受主杂质,变化趋势相反：体系的基态能先增大后减小,在z0=1.0 nm处取得极大值;若掺入中性杂质,杂质电子体系的基态能不变。
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| 关 键 词： | 双电子 柱形量子点 GaN 杂质 束缚能 |
The Ground-state Energy in Cylindrical Quantum Dot with Two Electrons Influenced by Impurity |
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| Abstract: | Within the effective-mass and finite potential barrier approximation,the ground-state energy of impurity to electron as functions of the charge of impurity,the quantum dot height and impurity position is investigated via a variational procedure when there are a different type of impurity in the cylindrical GaN/Al0.2Ga0.8N quantum dot（QD） with two electrons.Numerical results show that,when there is an impurity in the center of QD,the ground-state energy of impurity to electron reduces monotonously with increasing the QD height.While the charge of the impurity is negative,the impurity state becomes unstable.If there is a hydrogenic donor impurity in the QD the ground-state energy firstly reduces,and then increases with moving the hydrogenic donor impurity position from the bottom of QD to the top,there is a minimum at z0= 1.0 nm.But the status is opposite when there is an acceptor impurity in the QD,the ground-state energy firstly increases,and then decreases,there is a maximum at z0=1.0nm with moving the impurity position along the growth direction.When there is a neutral impurity in the QD,the ground-state energy of impurity to electron doesn＇t vary with impurity position. |
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| Keywords: | two electrons cylindrical quantum dot GaN impurity binding energy |
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