| 关于三极管放大区和饱和区的工程划分 |
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| 引用本文： | 刘红,张月楼.关于三极管放大区和饱和区的工程划分[J].三门峡职业技术学院学报,2004,3(4):59-60. |
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| 作者姓名： | 刘红 张月楼 |
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| 作者单位： | 三门峡职业技术学院,河南,三门峡,472000 |
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| 摘 要： | 通过短路埃伯尔斯-莫尔模型对双极型晶体管的放大工作状态和饱和工作状态进行了分析,按照所分析的结论,通过实例说明在发射结正偏、集电结也正偏(但偏置电压较小)时,双极型晶体管仍处于放大状态。
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| 关 键 词： | 埃伯尔斯-莫尔模型 双极型晶体管 放大区 饱和区 |
| 文章编号： | 1671-9123(2004)04-0059-02 |
| 修稿时间： | 2004年1月16日 |
Engineering Division between Amplified Area and Saturated Area of Transistor |
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| LIU Hong,ZHANG Yue-lou.Engineering Division between Amplified Area and Saturated Area of Transistor[J].Journal of Sanmenxia Polytechnic,2004,3(4):59-60. |
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| Authors: | LIU Hong ZHANG Yue-lou |
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| Abstract: | Through S/C(short-circuit) Ebers-Moll model this article manages to make relevant analysis on amplified state and saturated state of Bp (bipolar) Transistor. And according to the conclusion of the analysis, it gives an example to prove that Bp Transistor is still in amplified state when the emitter junction is forward biased as well as the collector(But the biased voltage is relatively low). |
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| Keywords: | Ebers-Moll model Bp Transistor amplified Area saturated Area |
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