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1.
Sol-gel法制备BZT铁电薄膜,用X射线衍射仪(BSX3200)和扫描电子显微镜研究了BZT的结构和表面形貌,用差热-热失重(TG-DTA)析谱分析BZT粉体的退火工艺.测定了薄膜的电性能:薄膜不加偏压下的介电常数大约为620左右,介电损耗和调谐量分别为0.0335和48.63%. 相似文献
2.
INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th… 相似文献
3.
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500 ℃ for 120 min.The morphologies of Cr-Si-TaAl film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film. 相似文献
4.
采用溶胶凝胶(sol-gel)法,在普通载玻片上成功制备ZnO薄膜,对于不同退火温度样品采用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外可见分光光度计(UVS)及光致荧光光谱(PL)对样品的结构、形貌和光学特性进行表征.XRD谱表明在300℃、400℃、500℃退火处理的样品都有较好的c轴择优取向,而且随着退火温度的升高择优取向明显改善.透射谱中能观察到明显的ZnO吸收边.用AFM观察到的样品表面形貌表明,退火温度提高使样品表面更加平整,同时粒径变大.PL谱中在380nm附近可观察到明显发光峰. 相似文献
5.
利用磁控溅射的方法在n型硅基底制备了Cu／CoN／Si（100）和Cu／CoSiN／Si（100）薄膜,并对它们进行了不同温度的退火．用原子力显微镜观察了它们的表面形貌．用扫描透射电镜能谱分析法得到了在不同退火温度下铜在上面两种薄膜中浓度与表面距离的分布,然后利用菲克第二定律对Cu／CoN／Si和Cu／CoSiN／Si体系中cu的扩散进行了计算和分析,得出中温条件（300℃-700℃）下Cu在CoN和CoSiN两种薄膜中的扩散系数表达式分别为8．98×10^-13exp（-0．45eV／kT）cHf／s和5．39×10^-11exp（-0．49eV／kT）Cm2／s． 相似文献
6.
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. 相似文献
7.
Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process. 相似文献
8.
Studies on characteristics of nanostructure of N-TiO2 thin films and photo-bactericidal action 总被引：1，自引：0，他引：1
Pseudomonas aeruginosa strain （AS 1.50） and Bacillus subtilis strain （AS 1.439） from Ming lake were decomposed by photocatalytic nanostructure N-TiO2 thin films in a photo-reactor under UV irradiation. The different thickness nanostructure N-TiO2 thin films coated on mesh grid were prepared by sol-gel method and immobilized at 500 ℃ （films A） or 350 ℃ （films B） for 1 h in a muffle furnace. The results showed that N-TiO2 thin film B （8.18 nm thickness, 2.760 nm height and 25.15 nm diameter） has more uniform granular nanostructure and thinner flat texture than N-TiO2 thin film A （12.17 nm thickness, 3.578 nm height and 27.50 nm diameter）. The bactericidal action of N-TiO2 thin film A and film B for Pseudomonas aeruginosa strain （AS 1.50） and Bacillus subtilis varniger strain （AS1.439） were investigated in this work. More than 95% of photocatalytic bactericidal efficiency for Pseudomonas aeruginosa strain （AS 1.50） and 75% for Bacillus subtilis strain （AS 1.439） were achieved by using N-TiO2 thin films-B for 70-80 rain of irradiation during the photo-bactericidal experimental process. The results indicated that the photo-induced bactericidal efficiency of N-TiO2 thin films probably depended on the characteristics of the films. 相似文献
9.
采用射频磁控溅射法制备了锐钛矿相TiO2薄膜,在基片温度、溅射功率、溅射时间以及靶材与基片间的距离等因素不变的情况下,研究不同氩氧分压比对薄膜亲水性能的影响。通过原子力显微镜(AFM)、X射线衍射光谱(XRD)表征了薄膜的微观表面形貌和晶相组成,采用静态接触角(SCA)评估薄膜的亲水性。实验结果表明不同氩氧比制备的锐钛矿相TiO2薄膜,紫外光照12 h后,接触角降到10o左右,而氩氧比小于等于5:5的接触角都低至5o左右,达到了超亲水性。氩氧分压比为4:6时,样品薄膜的光致亲水性最佳且光照后亲水性的保持较长。 相似文献
10.
采用高精度的光学显微镜和原子力显微镜研究了光滑S iO2衬底上聚苯乙稀薄膜的退湿润过程,并观测到成核退湿润过程:初态时在聚苯乙稀薄膜中出现随机分布的小孔,孔的尺寸的变化与时间成正比,终态时观测到聚苯乙稀小球在S iO2衬底上的蜂窝状分布,聚苯乙稀小球的分布与薄膜表面的缺陷密切相关。 相似文献
11.
王莹 《商丘职业技术学院学报》2009,8(2):58-60
采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜．利用原子力显微镜,研究氮的掺入对薄膜表面形貌的影响,结果表明,N的掺杂改善了HfO2薄膜的表面形貌,同时抑制了高温退火过程中表面粗糙度的增加;通过椭圆偏振仪对薄膜的光学特性的研究表明,随退火温度的升高,薄膜的折射率和消光系数都呈上升趋势． 相似文献
12.
MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging
from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the
XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 °C. Both AFM and
TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1−x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional
micrograph showing a well defined columnar structure.
Project supported by the National Science Council of PRC (No. 59910161981) and RGC grant from the Hong Kong Government under
Grant (No. NS-FC/HKUST 35) 相似文献
13.
为了制备多晶硅薄膜,研究了非晶硅薄膜的快速热退火（RTA）技术.先利用PECVD设备沉积非晶硅薄膜,然后把其放入快速热退火炉中进行退火.退火后的薄膜利用X射线衍射仪（XRD）和Raman测试仪分析其晶体结构,研究了退火温度、退火时间对非晶硅薄膜晶化的影响. 相似文献
14.
反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜,并对薄膜进行退火处理,研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征,采用拟合正入射透射谱数据计算薄膜的厚度。结果表明：不同溅射功率条件下制备的薄膜为非晶态,透射率在近红外部分达到60%以上,电阻率随溅射功率的增加呈U型变化,在120 W附近,电阻率达到极小值;退火后,薄膜的XRD谱出现Cu4O3、Cu O和Al2O3的混合相,薄膜透射率有所提高,电阻率随退火温度的提高而先增大后减小。 相似文献
15.
Cu(In,Ga)Se2 (CIGS) precursor films were deposited on Mo/glass by electrodeposition, and then annealed in Se vapor. The annealing temperature ranged from 450 °C to 580 °C, and two heating rates were selected. The results showed that the crystalline quality of the CIGS films and formation of the Cu-Se compound could be strongly influenced by the selenization temperature and heating rate. Raman spectroscopy and X-ray diffraction (XRD) analysis showed that when the selenization temperature was increased from 450 °C to 550 °C, the amount of binary CuSe phase decreased and the amount of Cu2Se increased. After annealing at 580 °C, a minimum amount of Cu2?xSe compounds was obtained and the degree of CIGS film crystallinity was higher than in other samples. The relationship between the properties of the film and the heating rate was studied. XRD and Raman spectra showed a decrease in the Cu2?xSe phase with increasing heating rate. Scanning electron microscopy (SEM) and XRD showed a remarkable increase in the grain size of CIGS during rapid heating. 相似文献
16.
用电化学阳极氧化法制备了一定孔隙率的多孔硅样品,然后用脉冲激光沉积法以PS为衬底生长一层ZnS薄膜.用X射线衍射仪、扫描电子显微镜和荧光分光光度计分别表征了ZnS薄膜的结构、形貌和ZnS/PS复合膜的光致发光性质.XRD结果表明,制备的ZnS薄膜沿β-ZnS(111)方向择优生长,结晶质量良好,但衍射峰的半峰全宽较大;SEM图像显示,ZnS薄膜表面出现一些凹坑,这是衬底PS的表面粗糙所致.室温下的光致发光谱表明,沉积ZnS薄膜后,PS的发光峰蓝移.把ZnS的蓝绿光与PS的橙红光叠加,在可见光区450~700 nm形成了一个较宽的光致发光谱带,ZnS/PS复合膜呈现较强的白光发射. 相似文献
17.
本文用XRD和SEM等分析测试手段,详细研究了Sol－Gel法不同工艺过程制得KTN薄膜样品的结构和形貌。发现KTN薄膜的结构和形貌主要受热处理工艺的烧结温度、升降温速率、烧结气氛等影响,详细分析讨论了产生这些影响的原因。在SrTiO3（100,111）基片上制备出了高取向、纯钙钛矿结构、表面形貌良好的KTN薄膜。 相似文献
18.
以透明导电玻璃(TCO)为衬底,用硝酸锌水溶液作为电解液,采用阴极电沉积法合成了ZnO薄膜.通过改变电解液浓度、温度和沉积电压等实验条件,系统研究了锌氧化物薄膜材料的电化学沉积过程.用扫描电镜、X射线衍射、紫外-可见光谱法等技术对沉积物的形貌、结构及光学性质进行了表征.结果表明,通过控制电解液的浓度和温度及沉积电压等反应条件可以制备出不同形貌的ZnO薄膜.XRD结果表明,所得的ZnO纯度高且呈六方纤锌矿结构;光谱法研究表明,该薄膜在344 nm和552 nm处有两个吸收峰,禁带宽度为3.25 eV. 相似文献
19.
高立华 《洛阳师范学院学报》2012,31(5):34-36,45
在工作气压为1.9 Pa的氩氧气混合气氛中,改变氩氧的流量比和基片温度,采用射频反应磁控溅射法在不锈钢基片上制备了二氧化硅薄膜试样,并对薄膜的微观表面形貌和薄膜的亲水性进行表征.结果表明,在氩氧分压比为64和基片温度为90℃时制备的SiO2薄膜亲水性能最佳. 相似文献
20.
Pd77Cu6Si17 （PCS） tbin film metallic glasses （TFMGs） with high glass forming ability and hardness were selected as a hard coating for improving the surface hardness ofAZ31 magnesium alloy. Both microindentation and nanoindentation tests were conducted on specimens with various PCS film thicknesses from 30 to 2000 nm. The apparent hardness and the relative indenta- tion depth （fl） were integrated using a quantitative model. The interaction parameters involved and relative hardness values were extracted from iterative calculations. According to the results, surface hardness can be enhanced greatly by PCS TFMGs in the shallow region, followed by gradual decrease with increasing fl ratio. In addition, specimens with thinner coatings （e.g., 200 nm） showed greater substrate-film interaction and those with thick coatings （e.g., 2000 nm） became prone to film cracking. The op- timum TFMG coating thickness in this study was estimated to be around 200 nm. 相似文献