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1.
采用非醇盐溶胶-凝胶工艺在Al2O3基片上旋转涂敷制得掺Sb的SnO2薄膜。再经直流溅射制得掺Pt的Sb：SnO2薄膜,探讨了不同Pt添加量对气敏性能的影响。结果表明,对Pt的溅射时间为90s时,元件对50ppm浓度乙醇气体的灵敏度高达43。经选择性研究表明,该元件有较好的选择性和优异的酒敏特性。 相似文献
2.
本文研究了 Eu_2O_3—SnO_2复合薄膜气敏元件的制作工艺和敏感性能。测量结果表明,这种元件对丙酮敏感,且具有选择性好,响应时间和恢复时间短等优点。 相似文献
3.
含钒-SnO_2催化剂不仅对甲醇选择性氧化制甲醛适用,而对乙醇选择性氧化制乙醛的效果也很好。 一、实验部分 1.Sn_(1-x)V_xO_2催化剂的制备 将分析纯SnO_2研碎,经200目/时筛得其SnO_2粉末,然后按下列配比与分析纯V_2O_5粉末混合: 相似文献
4.
对CuO材料进行掺杂金属氧化物试验，并用乙醇、甲醛、液化气、汽油、氢气等气氛进行气敏试验，结果表明，合适的掺杂原料不仅可以改变氧化铜气敏元件的灵敏度，而且可以提高氧化铜气敏元件的选择性。 相似文献
5.
牟志刚 《职教通讯(江苏技术师范学院学报)》2007,13(2)
采用硼氢化钠还原法制得聚乙烯吡咯烷酮(PVP)保护的Pt/Au纳米双金属簇,用TEM、UV-VIS吸收光谱进行了表征,从制备方法、还原顺序、金属不同摩尔比等方面对双金属簇的影响进行了研究.分别制得了Pt/Au合金及Pt/Au核壳结构的直径在2～5nm的纳米双金属簇. 相似文献
6.
国内气敏材料和器件的研究现状及趋势 总被引：3，自引：0，他引：3
傅军 《海南师范学院学报》2001,14(1):37-41
从气敏材料的制备，气敏元件的性能及如何提高气敏器件的灵敏度，选择性及长期稳定性等方面，介绍了国内气敏材料和器件的研究进展，对发展的趋势作了展望。 相似文献
7.
采用表面修饰技术,利用气敏元件表面覆膜方法,得到高选择性ＳｎＯ２半导体ＮＨ３敏感元件,并对元件的特性和机理进行了分析。 相似文献
8.
《西安文理学院学报》2015,(4)
利用化学溶液沉积(CSD)法在双轴织构的Ni W基带上制备了烧绿石结构的La2Zr2O7(LZO)氧化物薄膜,并研究了热处理过程中升温路线对其外延生长行为的影响.利用X射线衍射(XRD)和原子力显微镜(AFM)对不同热处理路线下所制得的LZO薄膜的织构和表面形貌进行了表征.结果表明:升温速率对LZO薄膜的织构度以及表面形貌影响较大.可以认为通过选择合适的热处理路线,利用CSD法可以制得具有锐利织构度、表面平整且无明显缺陷的LZO薄膜,同时,在最佳热处理条件下制得的LZO薄膜适合用作涂层导体缓冲层. 相似文献
9.
以无机盐SnCl2·2H2O为主体原料,以Zn(CH3COO)2·2H2O2为掺杂剂,无水乙醇为溶剂,采用溶胶-凝胶（Sol-Gel)工艺制备了ZnO-SnO2薄膜;采用DTA-TG及XRD等分析手段研究了ZnO-SnO2薄膜的热分解和晶化过程,对ZnO-SnO2薄膜的结构进行了表征。研究了ZnO-SnO2薄膜的电学、气敏性能及机理。实验证明,ZnO-SnO2薄膜在常温下对H2S气体具有很好的气敏性能。 相似文献
10.
11.
Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively. 相似文献
12.
INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th… 相似文献
13.
反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜,并对薄膜进行退火处理,研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征,采用拟合正入射透射谱数据计算薄膜的厚度。结果表明：不同溅射功率条件下制备的薄膜为非晶态,透射率在近红外部分达到60%以上,电阻率随溅射功率的增加呈U型变化,在120 W附近,电阻率达到极小值;退火后,薄膜的XRD谱出现Cu4O3、Cu O和Al2O3的混合相,薄膜透射率有所提高,电阻率随退火温度的提高而先增大后减小。 相似文献
14.
利用磁控溅射技术在玻璃基片上分别沉积ZnOx薄膜、TiO2-y薄膜和TiO2-y/ZnOx双层透明薄膜,改变薄膜沉积过程中的氩气(Ar)和氧气((O2)的比例,获得具有不同氧含量的ZnOx薄膜和TiO2-y薄膜.采用椭偏仪测定所有样品的折射率,仔细研究薄膜中氧含量对折射率的影响.分别选择具有较大的折射率TiO2-y薄膜和具有较小的折射率ZnOx薄膜的生长条件,制备TiO2-y/ZnOx双层薄膜,获得光密媒质/光疏媒质双层结构,并观察到He-Ne激光从ZnOx薄膜入射到TiO2-y/ZnOx界面上发生的全反射现象.研究成果适用于大学生物理实验中的研究型实验或大学创新实验. 相似文献
15.
采用磁控溅射方法在Si片沉积了Ti-50．9at％Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火．利用示差扫描量热方法（DSC）、X射线衍射仪（XRD）、透射电镜（TEM）研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化．实验结果表明：溅射态薄膜为非晶态,其晶化温度范围为430℃-535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势．薄膜的残余应力随着退火温度的增加而逐渐减少． 相似文献
16.
Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h. 相似文献
17.
利用射频磁控溅射制备AZO薄膜,然后在常温下0.1%的盐酸水溶液中对薄膜进行化学腐蚀,系统研究了腐蚀时间长短对薄膜的表面形貌和光电学性质的影响。结果表明,薄膜表面的粗糙度和方块电阻随腐蚀时间的增加而增大;薄膜的光学透射率和反射率均随腐蚀时间的增加而减小。 相似文献
18.
Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN. 相似文献
19.
王莹 《商丘职业技术学院学报》2009,8(2):58-60
采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜．利用原子力显微镜,研究氮的掺入对薄膜表面形貌的影响,结果表明,N的掺杂改善了HfO2薄膜的表面形貌,同时抑制了高温退火过程中表面粗糙度的增加;通过椭圆偏振仪对薄膜的光学特性的研究表明,随退火温度的升高,薄膜的折射率和消光系数都呈上升趋势． 相似文献
20.
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. 相似文献