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1.
Jie Jiang Xue-tao Wang Li-ping Zhu Li-qiang Zhang Zhi-guo Yang Zhi-zhen Ye 《浙江大学学报(A卷英文版)》2011,12(7):561-566
ZnNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature. 相似文献
2.
以乙酸锌为主要原料,利用溶胶-凝胶法在石英村底上制备Eu3+参杂ZnO薄膜,研究了Eu3+掺杂对ZnO薄膜微结构和光学性能的影响.XRD测量结果表明,Zn1-xEuxO薄膜具有六角纤锌矿结构且具有(002)择优生长,(002)衍射峰强度随着掺杂浓度的增加而减弱,晶格常数随Eu含量的增加而变大证实了Eu3+是以替位式形势存在于ZnO晶格中;紫外-可见透射光谱(UV)表明,所有薄膜在可见光区的透过率均超过80%;光致发光谱研究表明制备的薄膜具有良好的发光性能,几乎不存在缺陷发光. 相似文献
3.
采用溶胶凝胶(sol-gel)法,在普通载玻片上成功制备ZnO薄膜,对于不同退火温度样品采用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外可见分光光度计(UVS)及光致荧光光谱(PL)对样品的结构、形貌和光学特性进行表征.XRD谱表明在300℃、400℃、500℃退火处理的样品都有较好的c轴择优取向,而且随着退火温度的升高择优取向明显改善.透射谱中能观察到明显的ZnO吸收边.用AFM观察到的样品表面形貌表明,退火温度提高使样品表面更加平整,同时粒径变大.PL谱中在380nm附近可观察到明显发光峰. 相似文献
4.
以透明导电玻璃(TCO)为衬底,用硝酸锌水溶液作为电解液,采用阴极电沉积法合成了ZnO薄膜.通过改变电解液浓度、温度和沉积电压等实验条件,系统研究了锌氧化物薄膜材料的电化学沉积过程.用扫描电镜、X射线衍射、紫外-可见光谱法等技术对沉积物的形貌、结构及光学性质进行了表征.结果表明,通过控制电解液的浓度和温度及沉积电压等反应条件可以制备出不同形貌的ZnO薄膜.XRD结果表明,所得的ZnO纯度高且呈六方纤锌矿结构;光谱法研究表明,该薄膜在344 nm和552 nm处有两个吸收峰,禁带宽度为3.25 eV. 相似文献
5.
利用层层静电自组装技术构筑聚二烯丙基二甲基氯化铵/羧甲基壳聚糖-四氧化三铁（PDDA/CMCTS-Fe3O4）复合自组装膜。通过红外-可见分光光度计（FTIR）,X射线光电子能谱（XPS）和X射线衍射仪（XRD）等手段对复合膜的成分、微结构和性能进行了表征。XPS结果证实了PDDA,CMCTS和Fe3O4存在于复合膜上。 相似文献
6.
采用溶胶-凝胶（Sol-Gel）旋涂法在Si（100）衬底上制备ZnO薄膜，在室温下利用X射线衍射（XRD）、原子力显微镜（AFM）、光致发光谱（PL）等手段分析所得ZnO薄膜的晶体结构和发光特性．结果表明：当热分解温度为400℃，晶化温度为450℃～650℃时，溶胶．凝胶旋涂法制备的ZnO薄膜样品属六方纤锌矿结构，ZnO薄膜呈现沿各个晶面自由生长的特性；在室温下均有较强的紫外带边发射峰，这表明带间跃迁占了主导地位，与缺陷有关的可见发射带很弱．以上结果说明：溶胶．凝胶法制备的ZnO薄膜质量较高． 相似文献
7.
利用磁控溅射技术在玻璃基片上分别沉积ZnOx薄膜、TiO2-y薄膜和TiO2-y/ZnOx双层透明薄膜,改变薄膜沉积过程中的氩气(Ar)和氧气((O2)的比例,获得具有不同氧含量的ZnOx薄膜和TiO2-y薄膜.采用椭偏仪测定所有样品的折射率,仔细研究薄膜中氧含量对折射率的影响.分别选择具有较大的折射率TiO2-y薄膜和具有较小的折射率ZnOx薄膜的生长条件,制备TiO2-y/ZnOx双层薄膜,获得光密媒质/光疏媒质双层结构,并观察到He-Ne激光从ZnOx薄膜入射到TiO2-y/ZnOx界面上发生的全反射现象.研究成果适用于大学生物理实验中的研究型实验或大学创新实验. 相似文献
8.
报道了利用新型紫外光源—Ｅｘｃｉｍｅｒ紫外灯辐照制备钽氧化物薄膜的新方法,并对所制备的薄膜进行了Ｘ光光电子能谱（ＸＰＳ）分析,分析结果表明：所制备的钽氧化物薄膜不含碳而且符合化学计量比,有望获得好的介电性能 相似文献
9.
采用脉冲激光沉积方法,以烧结的Fe3O4为靶材,在STO（100）基底上制备了Fe3O4（100）薄膜。XRD和AFM显示薄膜为纯相外延单晶薄膜、表面较平整。对薄膜的磁电阻进行测量,薄膜为负磁电阻,且在Verwey转变温度（约120K）时磁电阻最大。霍尔效应测量得到薄膜中栽流子浓度随着温度的降低而减小,In（n）与I／T基本呈线性关系,符合半导体热激活模型,迁移率随着温度的降低而减小,说明在薄膜内存在大量电离杂质中心。薄膜磁滞回线中较高的饱和磁化场。说明薄膜中APBs密度较低。 相似文献
10.
黎锡强 《上海大学学报(英文版)》2000,4(2)
1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｔｈｅｓｐｕｔｔｅｒｉｎｇｔｅｃｈｎｉｑｕｅｗｅｌｌｓｕｉｔｓｔｈｅｇｒｏｗｔｈｏｆｃｏｍｐｏｕｎｄｓａｎｄａｌｌｏｙｓ ,ｗｈｏｓｅｅｌｅｍｅｎｔａｌｃｏｎｓｔｉｔｕｅｎｔｓｈａｖｅｓｉｇｎｉｆｉｃａｎｔｌｙｄｉｆｆｅｒｅｎｔｍｅｌｔｉｎｇ ｐｏｉｎｔｓａｎｄｖａｐｏｒｐｒｅｓｓｕｒｅｓ.ＡｃｏｎｓｉｄｅｒａｂｌｅａｍｏｕｎｔｏｆｗｏｒｋｓａｂｏｕｔｒｆｓｐｕｔｔｅｒｄｅｐｏｓｉｔｉｏｎｏｆｂｉｎａｒｙⅢ Ⅴｃｏｍｐｏｕｎｄｆｉｌｍｓｈａｓｂｅｅｎｐｕｂｌｉｓｈｅｄ[1～… 相似文献
11.
氧化锌是一种宽禁带的半导体材料,它在太阳能电池、气体传感器等各种光电子器件中有广泛的应用前景.本文用溶胶-凝胶法制备ZnO溶胶,再甩膜在石英基片上,最后经微波加热而获得ZnO薄膜.分别用原子力显微镜、分光光度计和荧光谱仪研究不同厚度薄膜的表面形貌和光学性质.实验结果表明:制备薄膜随着薄膜厚度的增加,薄膜的生长模式由层状生长向岛状生长转变;所有薄膜在可见光范国内的透射率都超过65%;样品发光特性良好. 相似文献
12.
13.
Low-Temperature Plasma Induced Grafting of 2-Methacryloyloxyethyl Phosphorylcholine onto Poly（tetrafluoroethylene） Films 总被引：1，自引：0，他引：1
Modification of poly(tetrafluoroethylene) (PTFE) films with 2-methacryloyloxyethyl phosphorylcholine (MPC) was performed by
low-temperature plasma treatment and grafting polymerization. Surface properties of PTFE were characterized by attenuated
total reflectance Fourier transform infrared (ATR-FTIR) spectra, X-ray photoelectron spectroscopy (XPS), and static contact
angle. The results show that MPC has been grafted onto PTFE film surface successfully. Contact angle for the modified PTFE
films in the water decreased from 108° to 58.25°, while surface energy increased from 17.52 mN/m to 45.47 mN/m. The effects
of plasma treatment time, monomer concentration and grafting time on degree of grafting were determined. In the meanwhile,
blood compatibility of the PTFE films was studied by checking thrombogenic time of blood plasma. 相似文献
14.
采用直流反应溅射方法在N型Si(100)衬底上制备了ZnO薄膜.薄膜的晶体结构采用X射线衍射技术来表征,测量结果表明制备的样品是沿c轴高度取向的六方纤锌矿结构的多晶薄膜.扫描电子显微镜测量显示薄膜的表面粗糙度较低,且ZnO与Si衬底的边界线清晰,结构致密.此外,利用室温光致发光谱研究了薄膜的光学性能,ZnO薄膜的室温光致发光谱(PL)只有位于377nm处的一个很强的紫外峰,这与材料内的激子复合有关.此外对薄膜进行了拉曼散射的研究,拉曼频移的计算结果表明溅射生长的薄膜中存在张应力(0.25Gpa). 相似文献
15.
采用溶胶凝胶工艺,分别在普通载玻片和Si片上生长了不同浓度的Er掺杂ZnO薄膜,稀土Er3＋与Zn2＋的摩尔比分别为1%、2%、3%,所得薄膜采用X射线衍射仪（XRD）、原子力显微镜（AFM）、紫外可见分光光度计（UVS）、光致荧光光谱（PL）对样品的结构、形貌和发光进行表征.结果表明掺杂后的样品仍为六角纤锌矿结构,随着掺杂浓度提高,掺杂样品的XRD衍射峰向大角方向微移,透射边向短波方向微移,紫外发光峰的强度逐渐增强,表面均呈颗粒状且尺寸逐渐减小. 相似文献
16.
Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process. 相似文献
17.
反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜,并对薄膜进行退火处理,研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征,采用拟合正入射透射谱数据计算薄膜的厚度。结果表明：不同溅射功率条件下制备的薄膜为非晶态,透射率在近红外部分达到60%以上,电阻率随溅射功率的增加呈U型变化,在120 W附近,电阻率达到极小值;退火后,薄膜的XRD谱出现Cu4O3、Cu O和Al2O3的混合相,薄膜透射率有所提高,电阻率随退火温度的提高而先增大后减小。 相似文献
18.
lintroductionDiamondisawide-band-semiconductorwithauniquealldextraordinalycombinationofelectronicpropelties(highbreakdownvoltagel"'l,electron/holemobilityl']andcall.iel'saturationvelocityl#]),mechanicalpropelties(highhardnessandstrength)andotherproperties… 相似文献
19.
Xi-qiang Li 《上海大学学报(英文版)》2000,4(2):163-166
Single crystal Ga
x
In1−x
As films have grown up on GaAs(100) substrate at 375°C and on InP(100) substrate at 390°C, respectively, by the method of
rf-sputtering with using undoped GalnAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260–390°C, even
at 465°C, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and
optical properties of the Ga
x
In1−x
As films were investigated using X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion
analyzer of X-ray (EDAX), Hall measurements and spectroscopic ellipsometry. 相似文献
20.
INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th… 相似文献