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Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. 相似文献
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The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te... 相似文献
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李喜峰 《陕西师范大学学报(哲学社会科学版)》2001,(Z1)
百余年来 ,对于李秀成这一历史人物的如何评价 ,史学界众说纷纭 ,基本形成了三种不同的鼎立之说。三说之中的“伪降说”观点是正确的 ,较为符合当时历史条件。伪降说认为 ,术利用假降之计暂且保存太平天革命实力 ,“保民为乐” ,“防鬼反为先” ,可以见出李秀成对太平天国革命的忠诚。 相似文献
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Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing
on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of
annealing temperature. Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching
time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor
(TFT) array process. 相似文献
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Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60 and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) ... 相似文献
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初中数学分层教学法的实践模式 总被引：2，自引：0，他引：2
李喜峰 《新课程学习(社会综合)》2010,(1)
分层教学是指根据因材施教原则,依照学生学习的个体差异性,把他们分为若干层次,对不同层次的学生.确定不同的学习目标,提出不同学习要求的教学方法.数学课堂分层教学法无疑是对数学教学方法的积极探索,也是对传统数学教学方法的发展. 相似文献
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