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Characteristics of bottom gate a-Si TFT array for AM-OLEDs |
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| Authors: | ZHANG Hao CHEN Long-long SHI Ji-feng LI Chun-ya LU Lin LI Xi-feng ZHANG Jian-hua |
| Institution: | 1. School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China ;Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China 2. Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China |
| Abstract: | The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process. The device shows a field effect mobility of 0.43 cm2/(V·s), on/off ratio of 7.5×106 and threshold voltage of 0.87 V. The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiN x /a-Si interface. The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) technology. |
| Keywords: | amorphous silicon (a-Si) transistor array stability |
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