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The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te... 相似文献
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V－MOS管发电机调节器结构简单方便，无移动触点。价格低廉，适用于国内各种汽车。电压不超过12V，功率不超过350W即可。调节器由三极管BG和场效应管V-MOS开头电路。调节励磁绕组LQ的励磁电压来调节输出电压。 相似文献
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A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively. 相似文献
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提出绘制晶体管基本放大电路的交流通路和微变等效电路的基本步骤,该方法过程规范易掌握,且可以得到规范的平面电路。同时还明确指出计算放大电路交流指标时应以BJT的ib或FET的vgs为公共变量列写各个信号表达式。 相似文献
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1 Introduction Organic semiconductors are receiving considerableattention due to their remarkable advantages especiallyvarious manufacturing methods ,lowcost and plentifulmaterials .Ebisawa ,et al.[1]fabricated the first poly-mer-based transistor in 1983 . Since then,lots of re-search works have been done in the filed of organicmaterial-based transistors .It was reported that organicthin-fil m transistor ( OTFT) fabricated by usingorganic semiconductor material copper-phthalocyanine(CuPc)[2… 相似文献
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应用自动控制原理对同步电动机晶闸管励磁系统进行扰动后的动态分析,提出了相应的性能指标。着重说明了各项性能指标满足系统运行的关键是反馈信号的采集、调试和锁定。 相似文献
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恒流管扫描电路综述 总被引：2，自引：0，他引：2
张学军 《湖南城市学院学报》2003,24(3):90-92
综述了非稳系数、改进系数、负影系数对恒流管扫描电路性能指标的影响，进而提出了改进恒流管扫描电路的具体措施． 相似文献
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利用标准的0.18μm6层金属混合信号/射频CMOS工艺设计了一种工作在2.4 GHz频段的全集成E类功率放大器.电路采用两级放大器级联结构,其中驱动级利用谐振技术生成高摆幅开关信号;输出级采用E类结构实现了信号的功率放大.在1.2 V电源电压下,设计的功率放大器最高输出功率为8.8 dBm,功率附加效率(PAE)达到44%.同时,提出了一种E类功率放大器功率控制方法.通过改变进入E类开关晶体管的信号幅度和占空比,在3位数字控制字的控制下,输出功率达到-3～8.8 dBm.所设计的功率放大器可以满足诸如无线传感网络(WSN)和生物遥测等低功率系统的应用. 相似文献
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