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A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively. 相似文献
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