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1.
Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing
on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of
annealing temperature. Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching
time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor
(TFT) array process. 相似文献
2.
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering
method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction
(XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence
of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the
resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film. 相似文献
3.
采用液相法合成了多晶材料,用高温提拉法(CZ法)生长出Er3 :Y0.5Gd0.5VO4晶体.用ICP光谱法测定晶体中Er3 离子含量为1.25 at%,分凝系数为1.06.采用热磷酸腐蚀晶片,在偏光显微镜下对晶体的(010)、(001)面上的缺陷进行了观察,可明显观察到位错线、生长层和包裹物.由此得出,Er3 :Y0.5Gd0.5VO4晶体的主要缺陷是位错、生长层和包裹物等. 相似文献
4.
采用射频磁控溅射技术用单晶Si(111)和载玻片制备了SiO2薄膜。对薄膜进行了不同温度的退火处理。利用X射线衍射仪,紫外-可见分光光度计和傅里叶变换红外光谱仪等测试不同退火温度下SiO2薄膜的微结构、透反射曲线和红外吸收谱。研究表明:退火后SiO2薄膜仍为四方结构,薄膜的平均晶粒尺寸随退火温度的升高逐渐增大,晶格常数与标准值相比均稍小。退火温度对薄膜平均反射率影响不明显;薄膜平均透射率随退火温度的升高先增大后减小。 相似文献
5.
Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process. 相似文献
6.
反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜,并对薄膜进行退火处理,研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征,采用拟合正入射透射谱数据计算薄膜的厚度。结果表明：不同溅射功率条件下制备的薄膜为非晶态,透射率在近红外部分达到60%以上,电阻率随溅射功率的增加呈U型变化,在120 W附近,电阻率达到极小值;退火后,薄膜的XRD谱出现Cu4O3、Cu O和Al2O3的混合相,薄膜透射率有所提高,电阻率随退火温度的提高而先增大后减小。 相似文献
7.
采用液相法合成了多晶材料,用高温提拉法（CZ法）生长出Er^3＋：Y0.5Gd0.5VO4晶体。用ICP光谱法测定晶体中Er^3＋离子含量为1．25at％,分凝系数为1．06。采用热磷酸腐蚀晶片,在偏光显微镜下对晶体的（010）、（001）面上的缺陷进行了观察,可明显观察到位错线、生长层和包裹物。南此得出,Er^3＋：Y0.5Gd0.5VO4晶体的主要缺陷是位锚、生长层和包裹物等。 相似文献
8.
采用化学溶液沉积法在Si(001)衬底上制备Ni0.7Zn0.3Fe2O4铁氧体薄膜,XRD谱表明样品具有单相的尖晶石结构;扫描电子显微镜结果表明样品平均颗粒尺寸随着退火温度的上升从10 nm增加到32 nm。NZFO铁氧体薄膜磁性能与退火温度有强烈的依赖关系,薄膜的矫顽力从退火温度为500℃时的25 Oe增加到900℃时的80 Oe,饱和磁化强度也由146emu/cm3增加到283 emu/cm3,这对于现代电子器件微型化有着非常重要的意义。 相似文献
9.
在ECR刻蚀系统中氧等离子体的放电存在两种模式,即微波功率低于500W时的低密度放电和微波功率高于500W时的高密度放电．a—C：F薄膜的刻蚀速率随着氧分压的增加而降低,是由于气压增加时,等离子体的电子温度降低及等离子体鞘电位降低造成．a—C：F薄膜的刻蚀速率随着氧气流量的增加相应地增加,是由于在氧分压保持0．1Pa不变的条件下,氧流量增加使氧原子在真空室的驻留时间变短造成． 相似文献
10.
AWAD Samir Hamid 《重庆大学学报(英文版)》2005,4(1)
1 Introduction Weight saving materials such as aluminum and its alloys are becoming increasingly important and have been attracting increasing attention over the past decade, specially in the automotive, aerospace and chemical industries, and electrical devices because of their high strength-to-weight ratio, high electrical and thermal conductivities, processability and recyclability and good resistance to degradation in some corrosive environments [1,2]. In the automotive industry, there is d… 相似文献
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12.
Ling ZHANG Tian TANG Zhen-liang ZHANG Bing LIANG Xiao-miao WANG Bai-ping FU 《Journal of Zhejiang University. Science. B》2013,14(11):1013-1024
Objective:This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths(μTBSs)of conventional and resin-modified glass ionomer cements(GICs/RMGICs).Methods:Forty-eight bovine incisors were prepared into rectangular blocks.Highly-polished labial enamel surfaces were either acid-etched,conditioned with liquids of cements,or not further treated(control).Subsequently,two matching pre-treated enamel surfaces were cemented together with one of four cements[two GICs:Fuji I(GC),Ketac Cem Easymix(3M ESPE);two RMGICs:Fuji Plus(GC),RelyX Luting(3M ESPE)]in preparation forμTBS tests.Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy(SEM).Results:Phosphoric acid etching significantly increased the enamelμTBS of GICs/RMGICs.Conditioning with the liquids of the cements produced significantly weaker or equivalent enamelμTBS compared to the control.Regardless of etching,RMGICs yielded stronger enamelμTBS than GICs.A visible hybrid layer was found at certain enamelcement interfaces of the etched enamels.Conclusions:Phosphoric acid etching significantly increased the enamelμTBSs of GICs/RMGICs.Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays,using GICs/RMGICs to improve the bond strengths.RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. 相似文献
13.
采用等离子体增强化学气相沉积技术制备了硼掺杂氢化非晶硅薄膜,然后经过不同温度的热退火处理,获得硼掺杂纳米硅薄膜．结果表明,退火温度为700℃时,样品中开始有纳米晶形成,随着退火温度的增加,在1000℃时,薄膜的晶化率达到77％,晶粒大小为3．9nm．退火温度低于600℃时,光学带隙随着退火温度的升高而变窄,高于600℃... 相似文献
14.
采用磁控溅射方法在Si片沉积了Ti-50．9at％Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火．利用示差扫描量热方法（DSC）、X射线衍射仪（XRD）、透射电镜（TEM）研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化．实验结果表明：溅射态薄膜为非晶态,其晶化温度范围为430℃-535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势．薄膜的残余应力随着退火温度的增加而逐渐减少． 相似文献
15.
王万录 《重庆大学学报(英文版)》2003,2(2)
1. Introduction Recently, carbon nanotubes have attracted a lot of interest because of their outstanding electrical properties and their potential application as a possible material for fabrication of cold cathodes [1-3]. It was found that the field enhancement from carbon nano-tubes exhibited large local field enhancement and considerable field emission currents at relatively low applied voltage. Carbon nanotube-based field emission displays have been fabricated using well-aligned nano-tubes … 相似文献
16.
本文采用磁控溅射法制备了HfOxNy高介电薄膜，结合XRD、XPS等手段研究了退火温度对薄膜的结构和化学键态的影响，发现N的掺入使Hf4f峰位向低能方向移动．而随着退火温度的升高，Hf4f的双峰峰位向着高结合能的方向移动，这表明N的含量随着退火温度的升高而降低．XRD结果显示N的掺人能提高薄膜的晶化温度． 相似文献
17.
加磁场退火对铁基薄膜巨磁阻抗效应的影响 总被引：2，自引：0，他引：2
用射频溅射法制备了(Fe88zr7B5)0.97CU0.03软磁合金薄膜,研究了不同磁场退火方式对(Fe88Zr7B5)0.97 Cu0.03薄膜软磁性能和巨磁阻抗(GMI)效应的影响。结果表明,纵向和横向磁场退火方式都能有效地提高薄膜样品的巨磁阻抗效应,在13 MHz频率下纵向最大GMI比分别为18％和17％;纵向磁场退火能有效消除薄膜样品的磁各向异性,优化薄膜样品的软磁性能;横向磁场退火则能有效感应横向磁各向异性并提高巨磁阻抗效应的磁场响应灵敏度。 相似文献
18.
This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed. In addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment. 相似文献
19.
采用NaClO和IPA体系对单晶硅各向异性腐蚀制备绒面。通过紫外可见光光度计和扫描电镜对硅绒面的反射率、形貌进行了表征。结果表明,当NaClO为10%（质量分数,下同）, IPA为5%,腐蚀温度为80℃,腐蚀时间为15 min时,能够得到均匀单晶硅绒面,硅片平均反射率达15%左右;与传统的NaOH/IPA腐蚀体系相比,该工艺制得的单晶硅绒面结构反射率低,有利于太阳能电池性能的提高。 相似文献
20.
利用PECVD生长技术制备a-Si/SiNx多层膜,利用解理技术获得干净平滑的截面.利用选择性化学腐蚀技术在横截面上制备出浮雕型一维纳米模板.通过控制多层膜子层的生长时间,得到线条宽度和槽状宽度均最小为20纳米的等间距模板,品质优于电子束制备的模板.以这种模板为基础,利用印章技术制作了硅基光栅. 相似文献