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Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively. 相似文献
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High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500 ℃ for 120 min.The morphologies of Cr-Si-TaAl film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film. 相似文献
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Phenolic resin(PF) and nano-SiO2 were used to improve the curing property and high humidity resistance of epoxy resin (EP) and methyl nadic anhydride (MNA)
resistor paint, respectively. Hydrogen bonds, formed between phenolic resin and nano-SiO2 in alcohol, made nano-SiO2 disperse easily in EP/MNA paint through phenolic resin without being treated by supersonic vibration. When the mass ratio
of PF to EP in paint is 3:7, the formed composite paint film can be cured in 2 min at 170 °C. When the mass ratio of nano-SiO2 to PF in paint is 3:100, the property of high humidity resistance of the composite paint is the best, meeting the requirement
of varying ratio of resistance less than 0.1% after experiment on high humidity resistance. SEM analysis shows the surface
of the composite paint film is smooth, glassy, tight and homogeneous, without acicular air holes. 相似文献
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A kind of undercoat for resistor with high temperature and humidity resistance was obtained by modifying epoxy resin with proper nano-SiO2 added at 80 ℃. The structure, thermal stability, humidity resistance, and morphological characteristics of the modified epoxy resin undercoat were studied by electrical tests, infrared spectra (IR) analysis, and scanning electron microscopy (SEM). The results show that more compact and steady inter-crosslinked network structures are formed in the modified epoxy resin undercoat added with nano-SiO2, which greatly improves the performance of modified epoxy resin undercoat. The undercoat with nano-SiO2 of about 2.71%, kept for six months at room temperature without flocculating and aggregating, is of good stability, and the surface of painted resistor is uniform, tight and without air holes on it. The varying ratio of resistance with such undercoat painted is less than one in a thousand after high temperature and humidity resistance tests. 相似文献
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A kind of modified epoxy resins was obtained by condensation of epoxy resin with silicic acid tetraethyl ester(TEOS) and nano-SiO2. The reactions were performed with hydrochloric acid as a catalyst at 63℃. The structure, thermal stability and morphological characteristics of the modified epoxy resins were studied through infrared spectra (FF-IR) analysis, thermogravimetric (TG) analysis and scanning electron microscopy respectively. It has been found from the IR and TG study that modified epoxy resins have greater thermal stability than epoxy resins, and its thermal stability has been improved by the formation of inter-crosslinked network structure. The modified epoxy resins exhibit heterogeneous morphology and heterogeneity increases with more TEOS feeding, which in turn confirms the formation of inter-crosslinked network structure in modified epoxy resins. 相似文献
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Theresonanttunnelingdiode (RTD) [1] isahigh speednanoelectronicdevicebasedonquantumresonanttunnelingeffect.Ithastheadvantagesofhighspeed,highfrequency ,lowoperatingvoltage,low powerdissi pation,intrinsicbistabilityandself latchingduetoitsnegativedifferentialresistance .Comparedwithconven tionaldevice,ithasthefeatureofreducingthenumberofdevicesandcircuitcomplexityforachievingthesamelog icfunction . TheMOBILE[2 ,3 ] isalogicelementrealizingthemonostable bistabletransitionofacircuitthatcon… 相似文献
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Different ambient conditions for the synthesis of Ag（Nb0.8Ta0.2）O3 ceramics were investi- gated. The Ag（Nb0.8Ta0.2）O3 powder was synthesized at 950 ℃ under different ambient conditions, and then pressed into disks and sintered between 1060 ℃ and 1100 ℃ respectively. Samples were investigated by X-ray diffraction, scanning electron microscopy and dielectric measurement. The results show that perovskite Ag（Nb0.8Ta0.2）O3 powder was easier to be synthesized in air than in vacuum at 950℃. Grain size of ceramic samples sintered in air was uniform （about 1 μm） and its dielectric loss was small for its high density. However, the samples decomposed greatly and ceramics could hardly be densified when sintered in vacuum, Thus,. higher atmospheric pressure and oxygen atmosphere would benifit the synthesis of Ag （Nb0.8Ta0.2）O3, and suppress its decomposition at high temperature. 相似文献
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The MOBILE is a logic element realizing the monostable-bistable transition of a circuit that consists of two resonant tunneling transistors--the resonant tunneling diodes (RTDs) connected in series. It has several advantages including multiple inputs and multiple functions. In this paper, by connecting a heterojunction phototransistor (HPT) with the MOBILE, a novel optoelectronic functional device can be got, which presents the function of beth photocurrent switching and photocurrent latching. These behaviors have been demonstrated for the first time by simulating experiments and circuit simulations, with RTDs firstly manufactured in China. Research indicates that the novel photo-controlled MOBILE has the same logic functions as conventional electrical MOBILE except for with light as an input signal. 相似文献
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Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h. 相似文献
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